MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, EVALUATION METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
- 申请公布号：
- US2006270073(A1)
- 申请号：
- US20060420329
- 申请日期：
- 2006.05.25
- 申请公布日期：
- 2006.11.30
- 申请人：
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 发明人：
- ISOBE ATSUO
- 分类号：
- H01L21/66;G01R31/26
- 主分类号：
- H01L21/66
- 摘要：
- A semiconductor element formed over the same substrate as a TFT, includes a semiconductor film having an impurity region; an insulating film formed over the semiconductor film; an electrode divided into a plurality of parts over the insulating film by spacing a distance a in a first direction (channel width direction); an insulator with a width b formed to be in contact with a side wall of the electrodes and an insulator formed in a region between the electrodes divided into a plurality of parts; a silicide layer formed over part of the surface of the impurity region; and characteristics of the TFT are evaluated by measuring resistance of the semiconductor film of the semiconductor element.
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