Semiconductor device

申请公布号：

US7859896(B2)

申请号：

US20060162702

申请日期：

2006.02.02

申请公布日期：

2010.12.28

申请人：

RENESAS ELECTRONICS CORPORATION

发明人：

KUROTSUCHI KENZO;TAKAURA NORIKATSU;FUJISAKI YOSHIHISA

分类号：

G11C11/00

主分类号：

G11C11/00

摘要：

A semiconductor device for high-speed reading and which has a high data-retention characteristic is provided. In a semiconductor device including a memory array having a plurality of memory cells provided at intersecting points of a plurality of word lines and a plurality of bit lines, where each memory cell includes an information memory section and a select element, information is programmed by a first pulse (reset operation) for programming information flowing in the bit line, a second pulse (set operation) different from the first pulse, and information is read by a third pulse (read operation), such that the current directions of the second pulse and the third pulse are opposite to each other.