SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 申请公布号：
- US2012248624(A1)
- 申请号：
- US201113308826
- 申请日期：
- 2011.12.01
- 申请公布日期：
- 2012.10.04
- 申请人：
- ENDO MITSUYOSHI;KABUSHIKI KAISHA TOSHIBA
- 发明人：
- ENDO MITSUYOSHI
- 分类号：
- H01L23/48;H01L21/302
- 主分类号：
- H01L23/48
- 摘要：
- According to one embodiment, a first back surface of a first substrate and a second front surface of a second substrate are jointed together so as to connect a first conductor with a second conductor. The first conductor includes a portion having a diameter equal to that of a first gap formed above a first metal layer in a range between the first metal layer and a first front surface, and a portion having a diameter greater than that of the first gap and smaller than an outer diameter of the first metal layer in a range between the first metal layer and the first back surface. A first insulating layer has a gap formed above the first metal layer, the gap being greater than the first gap and smaller than the outer diameter of the first metal layer.
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