Epitaxiewafer und Verfahren zu dessen Herstellung
- 申请公布号：
- DE102008062040(A1)
- 申请号：
- DE200810062040
- 申请日期：
- 2008.12.12
- 申请公布日期：
- 2009.06.18
- 申请人：
- SUMCO CORPORATION
- 发明人：
- ADACHI, NAOSHI;MOTOYAMA, TAMIO
- 分类号：
- C30B25/18;C30B29/06;H01L21/205;H01L21/322
- 主分类号：
- C30B25/18
- 摘要：
- Ein Epitaxiewafer umfasst ein Siliziumsubstrat, einen darauf ausgebildeten und Silizium und Kohlenstoff enthaltenden Gettering-Epitaxiefilm und einen auf dem Gettering-Epitaxiefilm ausgebildeten Silizium-Hauptepitaxiefilm, wobei der Gettering-Epitaxiefilm eine vorgegebene Kohlenstoffatomkonzentration aufweist und Kohlenstoffatome zwischen dessen Siliziumgitter vorkommen.
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