Passivation and sealing of semiconductor elements - using thin layer of glass obtd. by high frequency sputtering
- 申请公布号：
- DE2724348(A1)
- 申请号：
- DE19772724348
- 申请日期：
- 1977.05.28
- 申请公布日期：
- 1977.12.22
- 申请人：
- DEUTSCHE ITT INDUSTRIES GMBH
- 发明人：
- CHARLES KLING,HARRY
- 分类号：
- H01L21/3105;H01L21/316;H01L23/31;(IPC1-7):01L23/30
- 主分类号：
- H01L21/3105
- 摘要：
- <p>Semiconductor element has a substrate contg. >=1 zone of opposite conductivity forming a p-n junction. The substrate surface is covered with a layer (1) of dielectric material through which contacts pass to the zone. On to of layer (1) is a layer (2) of sputtered glass forming a passivating layer and sealing the element. Layer (1) is pref. SiO2 and/or Si3N4, 10,000-20,000 A thick, whereas layer (2) is pref. 10,000-40,000 angstroms thick. In the pref. mfg. process, a layer of glass is used on a target electrode in a high frequency sputtering appts. contg Ar at 10-15 to 10-7 torr, and an electrode for the substrate. The glass is sputtered at 1600-1800 watts and the layer (2) obtd. is subsequently tempered by heat treatment. A thin glass layer is provided without overheating the substrate. The process is faster and less costly than conventional treatments.</p>
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