MOS TYPE INTEGRATED CIRCUIT DEVICE

申请公布号：

JPS566448(A)

申请号：

JP19790081925

申请日期：

1979.06.28

申请公布日期：

1981.01.23

申请人：

CHO LSI GIJUTSU KENKYU KUMIAI

发明人：

IKEJIMA HIROSHI;HAMANO KUNIYUKI

分类号：

H01L29/78;H01L21/31;H01L21/316;H01L21/762;H01L21/8234;H01L27/06

主分类号：

H01L29/78

摘要：

PURPOSE:To improve the integration level and prevent the horizontal expansion of the silicone thermal oxide film by forming a separation region with a phosphorous glass film formed after the surface of the concave section formed on the region between elements is oxidized thinly. CONSTITUTION:A thin silicone oxide film and a silicone nitride film are selectively formed on the P-type substrate 201. With the silicone oxide film and the silicone nitride film left as mask, the P-type substrate is etched. Then, the P<+>-type layer 207 is formed on the bottom of the concave section thus etched and the thermal oxide film 208 is formed thereon thinly. Then, after the removal of the silicone oxide film and the silicone nitride film, the gate oxide film 209, the polycrystaline silicone layer 210, the source 211 and the drain are formed whereby the phosphorous glass layer 213 is formed. This eliminates the need for forming any thick oxide film by thermal oxidation thereby preventing horizontal expansion of the oxide film. Combined with the plasma etching, the formation of small space between elements is possible.