ONE TRANSISTOR-ONE CAPACITOR MEMORY CELL

申请公布号：

CA1134509(A)

申请号：

CA19800343004

申请日期：

1980.01.03

申请公布日期：

1982.10.26

申请人：

MOSTEK CORPORATION

发明人：

CHAN, TSIU C.

分类号：

G11C11/24;G11C11/40;(IPC1-7):G11C11/24;11C11/40

主分类号：

G11C11/24

摘要：

<p>ONE TRANSISTOR-ONE CAPACITOR MEMORY CELL An integrated circuit memory cell pair having its data lines insulated with respect to the semiconductor substrate at all points other than the point of electrical contact to the transistors of each memory cell. The semiconductor substrate has drain and source regions about the transmission channel of the field effect transistor and has a first capacitor electrode integral with one terminal of the transistor. A first polysilicon layer insulatively disposed relative to the substrate provides a conductive layer for a second capacitor electrode for each memory cell. A second insulatively disposed polysilicon layer provides the gate regions of the transistors and the data lines. The data lines make electrical contact through a self-aligned embedded contact. Using this construction, a highly dense memory cell array is achieved without sacrificing capacitor area.</p>