SEMICONDUCTOR LIGHT-RECEPTOR
- 申请公布号:
- JPS59145579(A)
- 申请号:
- JP19830020037
- 申请日期:
- 1983.02.09
- 申请公布日期:
- 1984.08.21
- 申请人:
- MATSUSHITA DENSHI KOGYO KK
- 发明人:
- KOBAYASHI ISAMU;UTSUNOMIYA SATORU;OGATA SHIYUNJI
- 分类号:
- H01L31/10;H01L31/103
- 主分类号:
- H01L31/10
- 摘要:
- PURPOSE:To prevent the effect of a high impurity-concentration diffusion region on photosensitivity determined by the whole P-N junction by forming a second impurity diffusion region of a conduction type reverse to a silicon substrate to a first impurity diffusion region forming section. CONSTITUTION:Arsenic ions are implanted to an N type silicon substrate 11, and an SiO2 film 5 is formed on the N type silicon substrate through annealing treatment in a nitrogen atmosphere and thermal oxidation treatment. Boron is diffused selectively while using the SiO2 film as a mask to form a P type diffusion region 21. The P type diffusion region 21 penetrates an N type diffusion region 6, and the diffusion front surface of the region 21 reaches to the N type silicon substrate 11. The greater part of the region 21 are in contact with the N type silicon substrate 11, and photosensitivity characteristics are determined by a P-N junction formed between the substrate and the region 21. With a dark current value, on the other hand, the increase of recombination currents is inhibited because impurity concentration in a surface layer is augmented.
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