SEMICONDUCTOR LIGHT-RECEPTOR

申请公布号：

JPS59145579(A)

申请号：

JP19830020037

申请日期：

1983.02.09

申请公布日期：

1984.08.21

申请人：

MATSUSHITA DENSHI KOGYO KK

发明人：

KOBAYASHI ISAMU;UTSUNOMIYA SATORU;OGATA SHIYUNJI

分类号：

H01L31/10;H01L31/103

主分类号：

H01L31/10

摘要：

PURPOSE:To prevent the effect of a high impurity-concentration diffusion region on photosensitivity determined by the whole P-N junction by forming a second impurity diffusion region of a conduction type reverse to a silicon substrate to a first impurity diffusion region forming section. CONSTITUTION:Arsenic ions are implanted to an N type silicon substrate 11, and an SiO2 film 5 is formed on the N type silicon substrate through annealing treatment in a nitrogen atmosphere and thermal oxidation treatment. Boron is diffused selectively while using the SiO2 film as a mask to form a P type diffusion region 21. The P type diffusion region 21 penetrates an N type diffusion region 6, and the diffusion front surface of the region 21 reaches to the N type silicon substrate 11. The greater part of the region 21 are in contact with the N type silicon substrate 11, and photosensitivity characteristics are determined by a P-N junction formed between the substrate and the region 21. With a dark current value, on the other hand, the increase of recombination currents is inhibited because impurity concentration in a surface layer is augmented.