Compositions of materials for forming protective film in semiconductor device
- 申请公布号：
- US4497922(A)
- 申请号：
- US19830501151
- 申请日期：
- 1983.06.06
- 申请公布日期：
- 1985.02.05
- 申请人：
- HITACHI CHEMICAL COMPANY, LTD.
- 发明人：
- SATO, HIDETAKA;UCHIMURA, SHUNICHIRO;UCHIGASAKI, ISAO;MAKINO, DAISUKE
- 分类号：
- H01L23/29;C08G77/54;H01L21/312;H01L23/31;(IPC1-7):C08K5/34
- 主分类号：
- H01L23/29
- 摘要：
- A composition of materials comprising a polyamide acid-silicone intermediate obtained by reacting (a) a diaminoamide compound of the formula: <IMAGE> wherein Ar and Y are as defined in the specification, (b) a diaminosiloxane, (c) a diamine, and (d) an aromatic tetracarboxylic acid dianhydride can form a protective film used in a semiconductor device excellent in adhesive properties, heat resistance and preventing soft errors due to alpha -rays.
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