SOLID-STATE IMAGE-PICKUP ELEMENT

申请公布号：

JPS60198858(A)

申请号：

JP19840056723

申请日期：

1984.03.23

申请公布日期：

1985.10.08

申请人：

MITSUBISHI DENKI KK

发明人：

DENDA MASAHIKO

分类号：

H01L27/146;H04N5/33

主分类号：

H01L27/146

摘要：

PURPOSE:To enhance the occupation rate of the photoelectric conversion part located within the area of an element by a method wherein a Schottky barrier type photoelectric conversion part, a switch MOS transistor to be used for signal lead out and a signal line are formed into a stacked construction. CONSTITUTION:An oxide film and the pattern of a photoelectric part are formed on a P type Si substrate 6, and a platinum silicide electrode 8 is formed. Then, an SiO2 film 7 is deposited, an aperture to be used to connect the platinum silicide electrode 8 and a source electrode 11 is provided, and amorphous Si or a polycrystalline Si film is deposited. Then, impurities are introduced into said Si film, and a P type Si film 21 is formed by performing a recrystallization. Then, a gate oxide film 7b is formed, impurities are diffused on a drain 22, a surface insulating film 23 is formed, a through hole is formed, and a signal line 24 is formed. An element having the photoelectric conversion of excellent uniformity can be obtained by constituting a Schottky diode on the substrate 6 using the electrode 8 and the P type Si as above-mentioned, and the dark current on the photoelectric conversion part can also be suppressed.