METHOD AND APPARATUS FOR CONTINUOUS TREATMENT OF WAFER
- 申请公布号：
- JPS61210628(A)
- 申请号：
- JP19850051663
- 申请日期：
- 1985.03.15
- 申请公布日期：
- 1986.09.18
- 申请人：
- TOSHIBA CORP;TOSHIBA MACH CO LTD
- 发明人：
- ASAYAMA KUNIO;TADA YOSHIAKI
- 分类号：
- G03F7/26;H01L21/027;H01L21/30;(IPC1-7):H01L21/30
- 主分类号：
- G03F7/26
- 摘要：
- PURPOSE:To prevent fluctuation of the resist pattern size by heat-treating the coating film immediately after exposure by means of a heating unit provided for the coating film between the energy irradiation process and the development process. CONSTITUTION:The wafer which has exited from the exposure unit 3 is sent to the second heating unit 5 within a fixed time, heat-treated at a constant temperature for a fixed time, and then conveyed to the development unit 4 by the wafer conveyer means 9 within a fixed time. With this, even if the lighography process from energy irradiation to the coating film to developmemt is performed continuously, fluctuation of the resist pattern size can be made small.
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