MANUFACTURE OF SEMICONDUCTOR DEVICE

申请公布号：

JPS6074432(A)

申请号：

JP19830181097

申请日期：

1983.09.29

申请公布日期：

1985.04.26

申请人：

NIPPON DENKI KK

发明人：

HONJIYOU KAZUHIKO

分类号：

H01L29/812;H01L21/28;H01L21/338

主分类号：

H01L29/812

摘要：

PURPOSE:To form a via hole without any particular alignment and ground a metal electrode by executing the alignment with a hole which is bored from the surface of wafer to the rear surface, boring a hole toward the metal electrode of surface from the rear surface and executing the plating from the rear surface. CONSTITUTION:A hole 12 which is bored from the surface 10 of semi-insulating GaAs wafer 1 to the rear surface 11 thereof. A metal electrode 2 is provided on the wafer surface and a photo resist pattern 3 providing an aperture 13 is also provided thereon and a photo resist film 4 is also provided at the rear surface thereof. A hole 12 is provided by etching the wafer 1. The photo resist pattern 3 and photo resist film 4 are removed, a photo resist pattern 6 aligned with the aperture in the side of rear surface of hole 12 and a photo resist film 5 is provided. Next, after removing the entire part of photo resist, a metal 8 with which power supply for plating is supplied is vacuum-deposited at the rear surface and after the photo resist film 7 is provided to the entire part of surface, gold plating 9 is carried out.