A PATTERNED SUBSTRATE FOR GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE AND THE LIGHT EMITTING DIODE USING THE SAME
- 申请公布号：
- KR101638738(B1)
- 申请号：
- KR20150057510
- 申请日期：
- 2015.04.23
- 申请公布日期：
- 2016.07.11
- 申请人：
- RESEARCH COOPERATION FOUNDATION OF YEUNGNAM UNIVERSITY
- 发明人：
- PARK, SI HYUN;CUI, HAO
- 分类号：
- H01L33/00;H01L33/02
- 主分类号：
- H01L33/00
- 摘要：
- The present invention relates to a light emitting diode which comprises a patterning substrate for a gallium nitride-based light emitting diode. The light emitting diode includes the patterning substrate having patterns. The patterns have a circular shape with a diameter (d) as seen from the upper part of the substrate. A distance between the centers of the diameters is a pitch (p). The shape of a cross section is an extruded shape of a height (h). So, the patterns of the patterning substrate can be optimized.
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