PHOTOSENSOR AND FORMING METHOD THEREOF

申请公布号：

JPH0394477(A)

申请号：

JP19900155262

申请日期：

1990.06.15

申请公布日期：

1991.04.19

申请人：

CANON INC

发明人：

TAKABAYASHI MEIJI;YONEHARA TAKAO

分类号：

H01L31/04;H01L21/20;H01L21/205;H01L21/36;H01L31/0352;H01L31/0392;H01L31/078;H01L31/18

主分类号：

H01L31/04

摘要：

PURPOSE:To obtain a low-cost photosensor, which has excellent energy conversion efficiency and an area of which can be increased, by mutually isolating and arranging the single crystal layer regions of a first photovoltaic element. CONSTITUTION:A photosensor has a first photovoltaic element having first conductivity type single crystal layers 4 formed onto opening sections on a substrate in which an insulating layer 3 having the opening sections is shaped onto a foundation material 1 having a conductive surface, single crystal layers 5 covering the single crystal layers 4 and efficiently generating photo-carriers by light irradiation and a second conductivity type layer 6 covering the single crystal layers 5, a second photovoltaic element having a first conductivity type amorphous layer 7, an I-type amorphous layer 8 and a second conductivity type amorphous layer 9, and a transparent conductor layer 10. That is, the single crystal layer regions of the first photovoltaic element are isolated and disposed mutually. Accordingly, the photosensor, which has high energy conversion efficiency and an area of which can be increased and cost of which can be reduced, can be obtained.