PROCESS FOR THE CONTROLLED GROWTH OF SINGLE-CRYSTAL FILMS OF SILICON CARBIDE POLYTYPES ON SILICON CARBIDE WAFERS
- 申请公布号：
- AU2250392(A)
- 申请号：
- AU19920022503
- 申请日期：
- 1992.06.12
- 申请公布日期：
- 1993.01.12
- 申请人：
- CASE WESTERN RESERVE UNIVERSITY
- 发明人：
- J. ANTHONY POWELL;DAVID J LARKIN
- 分类号：
- H01L21/36;H01L21/365
- 主分类号：
- H01L21/36
- 摘要：
- This invention is a method for the controlled growth of single-crystal semiconductor-device-quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.
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