Method for joining semiconductor substrates.

申请公布号：

EP0552466(A2)

申请号：

EP19920121262

申请日期：

1992.12.14

申请公布日期：

1993.07.28

申请人：

HONDA GIKEN KOGYO KABUSHIKI KAISHA

发明人：

YAMAKAWA, HIROSHI

分类号：

B23K1/19;B23K35/30;B81C3/00;C23C14/10;G01F1/684;H01L21/20;(IPC1-7):H01L21/20

主分类号：

B23K1/19

摘要：

<p>Disclosed is method for joining semiconductor substrates, in which two silicon semiconductor substrates, at least one of which has a layer of gold (Au) previously deposited on its joining surface, are matched together at their joining surfaces and heated to form an alloyed joint of silicon and gold. This method is to use only one kind of soldering material and form an eutectically alloyed joint firmly uniting two semiconductor substrate by heating at relatively low temperature, thereby thermal affection on elements placed near the soldering portion can be prevented. &lt;IMAGE&gt;</p>