Data input circuit of semiconductor storage device

申请公布号:
EP0744749(A2)
申请号:
EP19960108192
申请日期:
1996.05.22
申请公布日期:
1996.11.27
申请人:
OKI ELECTRIC INDUSTRY CO., LTD.
发明人:
TAKENAKA, TETSURO
分类号:
G11C11/417;G11C7/10;(IPC1-7):G11C7/00
主分类号:
G11C11/417
摘要:
<p>In a data input circuit of a semiconductor storage device, when a write control signal is changed to a write enable state or when write data changes during the write control signal being in the write enable state, a write pulse is generated in one of first and second write pulse data depending on a logical level of the write data. The first and second write pulse data are obtained by first forming intermediate first and second write pulse data based on the write control signal and the write data and then by executing logical operations between the intermediate first and second write pulse data and the write data so as to form final first and second write pulse data. The final first and second write pulse data are given to a pair of data lines, respectively. &lt;IMAGE&gt;</p>
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