Post passivation programmed mask ROM

申请公布号：

US5665995(A)

申请号：

US19950429603

申请日期：

1995.04.27

申请公布日期：

1997.09.09

申请人：

UNITED MICROELECTRONICS CORPORATION

发明人：

HSUE, CHEN-CHIU;SHEV, SHING-REN;SU, KUAN-CHENG;CHUNG, CHEN-HUI

分类号：

H01L21/8246;H01L27/112;(IPC1-7):H01L29/76

主分类号：

H01L21/8246

摘要：

A ROM device with an array of cells has conductors formed in a substrate. Insulation is formed, and parallel conductors are formed orthogonally to the line regions, as thin as about 2000 ANGSTROM . Glass insulation having a thickness of about 3000 ANGSTROM or less, formed over the conductors is is reflowed. Contacts and a metal layer on the glass insulation are formed. Resist is patterned and used for etching the resist pattern in the metal. Removal of the second resist and device passivation with a layer having a thickness of about 1000 ANGSTROM , precede activation of the impurity ions by annealing the device at less than or equal to about 520 DEG C. in a reducing gas atmosphere. After resist removal, a second resist is formed and exposed with a custom code pattern to form a mask. Ions are implanted into the substrate with a dosage of between about 1 E 14 and 3 E 14 atoms/cm2 with an energy of less than or equal to 200 keV adjacent to the conductors through the openings in the insulation.