SOLDER BALL LAND METAL STRUCTURE OF BGA SEMICONDUCTOR PACKAGE

申请公布号:
JPH1032280(A)
申请号:
JP19970098041
申请日期:
1997.03.31
申请公布日期:
1998.02.03
申请人:
ANAM IND CO INC
发明人:
RI BUO
分类号:
H01L23/12;H01L21/60;H01L23/498;H01L23/50;H05K1/11;H05K3/34;H05K3/40;(IPC1-7):H01L23/12
主分类号:
H01L23/12
摘要:
<p>PROBLEM TO BE SOLVED: To make the surface of a land metal bonded to a solder ball maximal in area by a method wherein one or more etching holes are provided to the center or periphery of the land metal. SOLUTION: An etching hole 160 which is square, circular, or crossed is provided near the center of the surface of an SMD-type land metal 100. The etching hole 160 is formed through the land metal so as to reach to the surface of a BT board 360 or is formed as deep as half the thickness of the land metal 100, and then the etching hole 160 is successively plated with a nickel layer 110 and a gold layer 120. The surface of a solder ball 150 fused later to come into contact with the land metal 100 is enlarged in area by the etching hole 160. Furthermore, the etching hole 160 serve also as a locking hole which prevents the solder ball 15 from separating from the land metal 100 after the solder ball 150 is welded to the land metal 100. By this setup, a BGA semiconductor package where the solder ball is made to serve as an input/output terminal is enhanced in reliability.</p>
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