Dot-junction photovoltaic cells using high-absorption semiconductors
- 申请公布号：
- US6034321(A)
- 申请号：
- US19980046529
- 申请日期：
- 1998.03.24
- 申请公布日期：
- 2000.03.07
- 申请人：
- ESSENTIAL RESEARCH, INC.
- 发明人：
- JENKINS, PHILLIP P.
- 分类号：
- H01L31/0224;H01L31/05;H01L31/052;H01L31/06;H01L31/072;(IPC1-7):H01L31/05
- 主分类号：
- H01L31/0224
- 摘要：
- A dot-junction photovoltaic cell using high absorption semi-conductors increases photovoltaic conversion performance of direct band gap semi-conductors by utilizing dot-junction cell geometry. This geometry is applied to highly absorbing materials, including Inx-1GaxAs. The photovoltaic cell configured to be separated into a thin active region and a thick, inactive substrate, which serves as a mechanical support.
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