Etching methods of silicon nitride films employed in microelectronic devices
- 申请公布号：
- US6037269(A)
- 申请号：
- US19990392053
- 申请日期：
- 1999.09.08
- 申请公布日期：
- 2000.03.14
- 申请人：
- SAMSUNG ELECTRONICS CO., LTD.
- 发明人：
- KIM, EUN-A;PARK, SANG-O
- 分类号：
- H01L21/306;H01L21/308;H01L21/311;(IPC1-7):H01L21/00
- 主分类号：
- H01L21/306
- 摘要：
- Aqueous compositions for etching silicon nitride films present on wafers used in microelectronic devices comprise hydrogen fluoride and phosphate. Methods for etching silicon nitride films present in wafers to be used in microelectronic devices comprise exposing the wafers to the aqueous compositions.
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