Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition

申请公布号：: US6110531(A)
申请号：: US19970892485
申请日期：: 1997.07.14
申请公布日期：: 2000.08.29
申请人：: SYMETRIX CORPORATION
发明人：: PAZ DE ARAUJO, CARLOS A.;MCMILLAN, LARRY D.;SOLAYAPPAN, NARAYAN;BACON, JEFFREY W.
分类号：: B05D1/00;B05D1/04;B05D3/04;B05D7/24;C23C4/12;C23C16/02;C23C16/40;C23C16/44;C23C16/448;C23C16/455;C23C16/46;C23C16/48;C23C16/52;C23C16/56;C23C18/12;C23C18/14;C23C26/02;C30B7/00;C30B25/02;H01C7/10;H01L21/02;H01L21/314;H01L21/316;H01L27/108;H01L27/115;H01L41/24;H05K3/10;(IPC1-7):C23C16/40;C23C16/18;H01L21/31
主分类号：: B05D1/00
摘要：: A mist is generated by a venturi from liquid precursors containing compounds used in chemical vapor deposition, transported in carrier gas through tubing at ambient temperature, passed into a heated zone where the mist droplets are gasified at a temperature of between 100 DEG C. and 200 DEG C., which is lower than the decomposition temperature of the precursor compounds. The gasified liquid is injected through an inlet assembly into a deposition reactor in which there is a substrate heated to from 400 DEG C. to 600 DEG C., on which the gasified compounds decompose and form a thin film of layered superlattice compound.