Method of preventing current leakage around a shallow trench isolation structure
- 申请公布号：
- US6281081(B1)
- 申请号：
- US19980192042
- 申请日期：
- 1998.11.13
- 申请公布日期：
- 2001.08.28
- 申请人：
- UNITED MICROELECTRONICS CORP.
- 发明人：
- CHIEN SUN-CHIEH;KUO CHIEN-LI;LEE TZUNG-HAN;LIAO WEI-WU
- 分类号：
- H01L21/762;(IPC1-7):H01L21/336;H01L21/76
- 主分类号：
- H01L21/762
- 摘要：
- An ion implantation method useful for fabricating shallow trench isolation structureimplants phosphorus ions instead of arsenic ions into a substrate when the source/drain regions of an NMOS device are doped. Alternatively, low energy ions are used in the ion implantation for forming the source/drain regions of an NMOS device. Consequently lattice dislocations of the crystal structure within a substrate is reduced and unwanted device leakage current is eliminated.
Copyright Notice © 2009-2024 传众 版权所有