METHOD OF MANUFACTURING CHIP-TYPE SOLID ELECTROLYTIC CAPACITOR
- 申请公布号：
- JP2002175939(A)
- 申请号：
- JP20010035813
- 申请日期：
- 2001.02.13
- 申请公布日期：
- 2002.06.21
- 申请人：
- NIPPON CHEMICON CORP
- 发明人：
- TAKEDA YOSHIHIRO
- 分类号：
- H01G13/00;H01G9/00;H01G9/012;H01G9/04;(IPC1-7):H01G9/012
- 主分类号：
- H01G13/00
- 摘要：
- PROBLEM TO BE SOLVED: To enable a thin and uniform electrically insulating layer to be easily formed, even on the rugged surface of a lead frame. SOLUTION: An anode is equipped with an anode-leading wire 4 and formed of valve action metal, and a dielectric oxide film, an electrolytic layer, and a cathode layer are successively laminated on the surface of the anode for the formation of a capacitor element 2, where the cathode layer is made to serve as its periphery. After the capacitor element 2 has been mounted on a lead frame 11 for making external terminals 5 and 6 located below the capacitor element 2, a sheathing resin 3 is formed, so as to cover the capacitor element 2; an anode leading wire 4 is connected to the anode terminal 5; the mounted capacitor element 2 is covered with sheathing resin 3; and a prescribed region, containing the capacitor element 2, is cut out into a prescribed shape for the formation of a chip-type solid electrolytic capacitor 1. Before projections 20 used for connecting the anode terminal 5 to the anode leading wire 4 are formed on the lead frame 11, an electrical insulating resin layer 9 is provided between the underside of the capacitor element 2 and the anode terminal 5.
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