Positive photoresist composition

申请公布号：

US6410204(B1)

申请号：

US20000669907

申请日期：

2000.09.27

申请公布日期：

2002.06.25

申请人：

FUJI PHOTO FILM CO., LTD.

发明人：

KODAMA KUNIHIKO;SATO KENICHIRO;AOAI TOSHIAKI

分类号：

H01L21/027;G03F7/004;G03F7/039;(IPC1-7):G03F7/004

主分类号：

H01L21/027

摘要：

A positive photoresist composition comprising (A) a compound which generates a sulfonic acid having naphthalene structure by the irradiation with actinic rays of a wavelength of 220 nm or less or radiation, and (B) a resin whose solubility in an alkali developing solution increases by the action of an acid is disclosed.