ANODIC OXIDATION METHOD, ELECTROCHEMICAL OXIDATION METHOD, ELECTRIC FIELD EMISSION TYPE ELECTRON SOURCE, AND MANUFACTURING METHOD FOR THE SAME

申请公布号：: JP2003328189(A)
申请号：: JP20020138994
申请日期：: 2002.05.14
申请公布日期：: 2003.11.19
申请人：: MATSUSHITA ELECTRIC WORKS LTD
发明人：: WATABE YOSHIFUMI;AIZAWA KOICHI;KOMODA TAKUYA;HATAI TAKASHI;HONDA YOSHIAKI
分类号：: C25D11/32;C25D17/10;C25D21/12;H01J1/312;H01J9/02;(IPC1-7):C25D11/32
主分类号：: C25D11/32
摘要：: PROBLEM TO BE SOLVED: To provide an anodic oxidation and an electrochemical oxidation method for reducing the intra-plane fluctuation of the characteristics of an electronic device such as an electric field emission type electron source, the electric field emission type electron source having small intra-plane fluctuation of emission current, and a manufacturing method for the same. SOLUTION: The electric field emission type electron source is provided with a strong electric drift layer formed by electrochemically oxidizing a polycrystalline silicon layer after being anodically oxidized. The strong electric field drift layer is obtained by anodically oxidizing using a lower part electrode of a material C to be treated on which the polycrystalline silicon layer is formed as an anode to form a composite nano crystalline layer and after that, electrochemically oxidizing it. The anodic oxidation and the electrochemical oxidation are performed by passing current between the anode and a cathode 42 dipped in an electrolyte liquid B in a treating vessel 41. The shape of the cathode 42 is adjusted to suppress that current density in the peripheral part of the objective region E in the material C to be treated becomes larger than that in the other part of the objective region E. COPYRIGHT: (C)2004,JPO