DIFFUSION BARRIER LAYER AND SEMICONDUCTOR DEVICE CONTAINING SAME

申请公布号：: SG101955(A1)
申请号：: SG20010000551
申请日期：: 2001.02.03
申请公布日期：: 2004.02.27
申请人：: INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人：: STEPHAN ALAN COHEN;TIMOTHY JOSEPH DALTON;JOHN ANTHONY FITZSIMMONS;STEPHEN MCCONNELL GATES;LYNNE M GIGNAC;PAUL CHARLES JAMISON;KANG-WOOK LEE;SAMPATH PURUSHOTHAMAN;DARRYL D RESTAINO;EVA SIMONYI;HORATIO SEYMOUR WILDMAN
分类号：: H01L21/28;H01L21/31;H01L21/316;H01L21/318;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/285;H01L23/48;H01L21/321;H01L21/320;H01L21/314
主分类号：: H01L21/28
摘要：: A semiconductor device containing a diffusion barrier layer is provided. The semiconductor device includes at least a semiconductor substrate containing conductive metal elements; and, a diffusion barrier layer applied to at least a portion of the substrate in contact with the conductive metal elements, the diffusion barrier layer having an upper surface and a lower surface and a central portion, and being formed from silicon, carbon, nitrogen and hydrogen with the nitrogen being non-uniformly distributed throughout the diffusion barrier layer. Thus, the nitrogen is more concentrated near the lower and upper surfaces of the diffusion barrier layer as compared to the central portion of the diffusion barrier layer. Methods for making the semiconductor devices are also provided.