HIGH-K DIELECTRIC FILM, METHOD OF FORMING THE SAME AND RELATED SEMICONDUCTOR DEVICE
- 申请公布号：
- AU2003266410(A1)
- 申请号：
- AU20030266410
- 申请日期：
- 2003.07.30
- 申请公布日期：
- 2005.02.25
- 申请人：
- INFINEON TECHNOLOGIES AG
- 发明人：
- CHAN LIM;KILHO LEE
- 分类号：
- H01L21/28;H01L29/51
- 主分类号：
- H01L21/28
- 摘要：
- A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of metal-silicon-oxynitride having a first nitrogen content and a first silicon content and a top layer of metal-silicon-oxynitride having a second nitrogen content and a second silicon content. The second nitrogen content is higher than the first nitrogen content and the second silicon content is higher than the first silicon content.
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