Spacer chalcogenide memory method

申请公布号：

US2005062074(A1)

申请号：

US20040983375

申请日期：

2004.11.08

申请公布日期：

2005.03.24

申请人：

MACRONIX INTERNATIONAL CO., LTD.

发明人：

LUNG HSIANG LAN

分类号：

H01L27/24;H01L45/00;(IPC1-7):H01L29/768

主分类号：

H01L27/24

摘要：

The present invention includes devices and methods to form memory cell devices including a spacer comprising a programmable resistive material alloy. Particular aspects of the present invention are described in the claims, specification and drawings.