CLEANING SOLUTIONS AND ETCHANTS AND METHODS FOR USING SAME
- 申请公布号：
- WO2005045895(A2)
- 申请号：
- WO2004US35544
- 申请日期：
- 2004.10.27
- 申请公布日期：
- 2005.05.19
- 申请人：
- SACHEM, INC.;WOJTCZAK, WILLIAM, A.;DEWULF, DEAN;COLLINS, SIAN
- 发明人：
- WOJTCZAK, WILLIAM, A.;DEWULF, DEAN;COLLINS, SIAN
- 分类号：
- C11D1/00;H01L;H01L21/02;H01L21/311;H01L21/768;(IPC1-7):H01L/
- 主分类号：
- C11D1/00
- 摘要：
- <p>Composition for cleaning or etching a semiconductor substrate and method for using the same. The composition may include a fluorine-containing compound as an active agent such as a quaternary ammonium fluoride, a quaternary phosphonium fluoride, sulfonium fluoride, more generally an -onium fluoride or "multi" quaternary -onium fluoride that includes two or more quaternary -onium groups linked together by one or more carbon-containing groups. The composition may further include a pH adjusting acid such as a mineral acid, carboxylic acid, dicarboxylic acid, sulfonic acid, or combination thereof to give a pH of about 2 to 9. The composition can be anhydrous and may further include an organic solvent such as an alcohol, amide, ether, or combination thereof. The composition are useful for obtaining improved etch rate, etch selectivity, etch uniformity and cleaning criteria on a variety of substrates.</p>
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