SEMICONDUCTOR PROCESSING METHOD FOR PROCESSING SUBSTRATE TO BE PROCESSED AND ITS APPARATUS

申请公布号：: KR20050094345(A)
申请号：: KR20047018895
申请日期：: 2004.11.23
申请公布日期：: 2005.09.27
申请人：: TOKYO ELECTRON LIMITED
发明人：: FURUYA HARUHIKO;MOROZUMI YUICHIRO;IKEGAWA HIROAKI;HIRAYAMA MAKOTO;ITO YUICHI
分类号：: C23C16/44;(IPC1-7):H01L21/205
主分类号：: C23C16/44
摘要：: A method for processing a substrate (10) to be processed by means of a semiconductor processing apparatus (1), wherein a process gas is supplied into a processing vessel (2) while controlling the temperature of a first substrate (10) to a processing temperature in the processing vessel (2) so as to conduct a semiconductor processing of the first substrate. During the semiconductor processing, a by-product film is formed on the inner surface of the processing vessel (2). After the first substrate (10) is taken out of the processing vessel (2) after the semiconductor processing, a reforming gas is supplied into the processing vessel (2) so as to conduct a reforming processing of the by-product film. The reforming processing is so set as to lower the heat reflectivity of the by-product film. The process gas is again supplied into the processing vessel (2) after the reforming processing while controlling the temperature of a second substrate (10) in the processing vessel (2) so as to conduct a semiconductor processing of the second substrate.