Method for manufacturing large area stamp for nanoimprint lithography

申请公布号:
EP1594002(A3)
申请号:
EP20050000648
申请日期:
2005.01.14
申请公布日期:
2006.02.01
申请人:
LG ELECTRONICS INC.
发明人:
LEE, KI DONG
分类号:
B82B3/00;G03F7/00;B29C59/02;H01L21/00;H01L21/027
主分类号:
B82B3/00
摘要:
<p>Provided is a method for manufacturing a large area stamp for nanoimprint lithography using a fabricated small area stamp. The method includes: fabricating a first small area stamp having a pattern less than a few hundred nanometers; and fabricating a second large area stamp having a pattern less than a few hundred nanometers by a step-and-repeat method using the fabricated first small area stamp. </p>
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