Avalanche diode with breakdown voltage controlled by gate length
- 申请公布号:
- US7056761(B1)
- 申请号:
- US20030388815
- 申请日期:
- 2003.03.14
- 申请公布日期:
- 2006.06.06
- 申请人:
- NATIONAL SEMICONDUCTOR CORPORATION
- 发明人:
- VASHCHENKO VLADISLAV;CONCANNON ANN;HOPPET PETER J.;TER BEEK MARCEL
- 分类号:
- H01L21/00;H01L21/20
- 主分类号:
- H01L21/00
- 摘要:
- In an avalanche structure, different breakdown voltages are achieved by making use of a polygate and forming a highly doped p-n junction beneath the polygate, and adjusting the gate length and optionally the bias voltage of the gate.
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