Avalanche diode with breakdown voltage controlled by gate length

申请公布号:
US7056761(B1)
申请号:
US20030388815
申请日期:
2003.03.14
申请公布日期:
2006.06.06
申请人:
NATIONAL SEMICONDUCTOR CORPORATION
发明人:
VASHCHENKO VLADISLAV;CONCANNON ANN;HOPPET PETER J.;TER BEEK MARCEL
分类号:
H01L21/00;H01L21/20
主分类号:
H01L21/00
摘要:
In an avalanche structure, different breakdown voltages are achieved by making use of a polygate and forming a highly doped p-n junction beneath the polygate, and adjusting the gate length and optionally the bias voltage of the gate.
专利推荐
移动版 | 电脑版 | 返回顶部