Method for reworking low-k dual damascene photo resist
- 申请公布号：
- US2007004193(A1)
- 申请号：
- US20050173275
- 申请日期：
- 2005.07.01
- 申请公布日期：
- 2007.01.04
- 申请人：
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 发明人：
- WU TSANG-JIUH;YEH CHEN-NAN;LI DEAN;OUYANG HUI
- 分类号：
- H01L21/4763
- 主分类号：
- H01L21/4763
- 摘要：
- A new method of forming a dual damascene structure involves forming a via-level precursor structure on a substrate and spin coating an oxide protective layer over the bottom anti-reflective coating, which is the last layer of the via-level precursor structure. A trench-level photoresist layer is deposited over the oxide protective layer to form a trench pattern etch mask. The oxide protective layer protects the BARC layer and the via plugs from photoresist removing process. When and if the trench-level photoresist layer is to be reworked, the trench-level photoresist layer is simply removed without removing the BARC layer and the via plugs under the oxide protective layer.
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