Sealing sidewall pores in low-k dielectrics

申请公布号：

US7208418(B1)

申请号：

US20030728774

申请日期：

2003.12.08

申请公布日期：

2007.04.24

申请人：

ADVANCED MICRO DEVICES, INC.

发明人：

OKADA LYNNE A.;TRAN MINH QUOC;WANG FEI;YOU LU

分类号：

H01L21/311

主分类号：

H01L21/311

摘要：

Barrier metal layer discontinuities or gaps due to low-k dielectric porosity is reduced by sealing sidewall porosity before barrier metal layer deposition. Embodiments include sealing sidewall porosity by depositing a swelling agent, adhesion promoter or an additional layer of low-k material.