Laser Annealing Method

申请公布号：

US2007190710(A1)

申请号：

US20070735542

申请日期：

2007.04.16

申请公布日期：

2007.08.16

申请人：

SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人：

KUSUMOTO NAOTO;TANAKA KOICHIRO

分类号：

H01L21/268;H01L21/84;B23K26/06;H01L21/20

主分类号：

H01L21/268

摘要：

In crystallizing an amorphous silicon film by illuminating it with linear pulse laser beams having a normal--distribution type beam profile or a similar beam profile, the linear pulse laser beams are applied in an overlapped manner. There can be obtained effects similar to those as obtained by a method in which the laser illumination power is gradually increased and then decreased in a step-like manner in plural scans.