Resistive organic memory device and fabrication method thereof
- 申请公布号：
- US2007194288(A1)
- 申请号：
- US20060633020
- 申请日期：
- 2006.12.04
- 申请公布日期：
- 2007.08.23
- 申请人：
- LEE KWANG HEE;CHOI TAE LIM;JOO WON JAE;LEE SANG KYUN
- 发明人：
- LEE KWANG HEE;CHOI TAE LIM;JOO WON JAE;LEE SANG KYUN
- 分类号：
- B32B27/18;B32B9/04;B32B15/04;B32B27/30;B32B27/36;H01B1/12
- 主分类号：
- B32B27/18
- 摘要：
- Disclosed herein are an organic memory device and a method for fabricating the memory device. The organic memory device may include a first electrode, a second electrode and an organic active layer between first and second electrodes, wherein the organic active layer is formed of a mixture of a conductive polymer and a metallocene compound. Because the organic memory device possesses decreased switching time, decreased operating voltage, decreased fabrication costs and increased reliability, the organic memory device may be used as a highly integrated large-capacity memory device.
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