METHOD FOR FABRICATING FLASH MEMORY DEVICE

申请公布号：

KR20070106300(A)

申请号：

KR20060038993

申请日期：

2006.04.28

申请公布日期：

2007.11.01

申请人：

HYNIX SEMICONDUCTOR INC.

发明人：

KWAK, SANG HYON

分类号：

H01L27/115

主分类号：

H01L27/115

摘要：

<p>A method for fabricating a flash memory device is provided to improve the operation speed of a device by forming a bitline under a PVD(physical vapor deposition) tungsten layer without increasing specific resistance of a tungsten layer and using a barrier metal. An interlayer dielectric(22) is formed on a semiconductor substrate(21). A drain contact(23) and a metal contact(25) are connected to a predetermined region of the semiconductor substrate, penetrating the interlayer dielectric. A part of the interlayer dielectric is recessed. A grain growth preventing layer(26) is formed on the recessed interlayer dielectric. The grain growth preventing layer can be made of a nitride layer, having a thickness of 300-500 angstroms. A metal layer is formed on the front surface of the interlayer dielectric. The metal layer is patterned to form a bitline(27a).</p>