METHOD OF WAFER PLATING

申请公布号：

KR20070119502(A)

申请号：

KR20070055348

申请日期：

2007.06.07

申请公布日期：

2007.12.20

申请人：

ELECTROPLATING ENGINEERS OF JAPAN LIMITED

发明人：

UCHIUMI YUJI

分类号：

C25D7/12

主分类号：

C25D7/12

摘要：

A method of wafer plating is provided to make it possible to carry out plating with a uniform film thickness on the entire area of a plated surface even for a wafer with a large diameter by improving conventional wafer plating treatment techniques. In a method of wafer plating comprising disposing a wafer on an opening of a plating vessel, contacting an outer peripheral side of the wafer with a cathode electrode, supplying a plating solution, thereby causing the plating solution that has reached the wafer to flow in the outer peripheral direction of a wafer surface to be plated, and supplying a plating current by an anode electrode(A) disposed within the plating vessel oppositely to the wafer and the cathode electrode, thereby subjecting the wafer to a plating treatment, the method is characterized in that the anode electrode has a shape that is almost the same shape as the wafer surface to be plated, a plurality of peripheral edge current supplying parts(ar1-ar4) are installed on a peripheral edge of the anode electrode, and a central current supplying part(ac) is installed in the center of the anode electrode at the same time so as to adjust a peripheral edge plating current supplied from the peripheral edge current supplying parts and a central plating current supplied from the central current supplying part.