EXPOSURE METHOD

申请公布号：

JP2008205312(A)

申请号：

JP20070041331

申请日期：

2007.02.21

申请公布日期：

2008.09.04

申请人：

DENSO CORP

发明人：

FUKUDA KAZUYUKI

分类号：

H01L21/027;G01B11/00;G03F7/20

主分类号：

H01L21/027

摘要：

<P>PROBLEM TO BE SOLVED: To provide an exposure method at lost cost which is capable of accurately detecting the orthogonality of a stage-moving shaft of an exposure apparatus during exposure processing. <P>SOLUTION: In a semiconductor wafer WF, respective cells CLa, CLc are formed adjacent in the X-axis direction of the stage-moving shaft, a plot pattern forming region 15 and an inspection pattern 16 are formed in the cell CLa, and a plotting pattern forming area 15 and an inspection pattern 17 are formed in the cell CLc. Respective inspection patterns 16, 17 are formed in a scribe region SL formed between respective cells CLa, CLc, the inspection pattern 16 constitutes the main scale of a caliper and the inspecting pattern 17 constitutes the vernier scale of the caliper. Thus, the linear rod-like patterns of respective inspecting patterns 16, 17 are used as scales on the basis of the principle of vernier, positional deviations of respective inspecting patterns 16, 17 can be measured visually, and deviations in the arrays of respective cells CLa, CLc can be detected on the basis of the positional deviations. <P>COPYRIGHT: (C)2008,JPO&INPIT