MULTI-BIT ELECTRO-MECHANICAL MEMORY DEVICE AND METHOD MANUFACTURING THE SAME
- 申请公布号：
- KR20080103264(A)
- 申请号：
- KR20070050346
- 申请日期：
- 2007.05.23
- 申请公布日期：
- 2008.11.27
- 申请人：
- SAMSUNG ELECTRONICS CO., LTD.
- 发明人：
- LEE, JI MYOUNG;KIM, MIN SANG;YUN, EUN JUNG;LEE, SUNG YOUNG;CHOI, IN HYUK
- 分类号：
- H01L27/115
- 主分类号：
- H01L27/115
- 摘要：
- <p>A multi-bit electromechanical memory device and a manufacturing method thereof are provided to increase the integration degree of the memory device by minimizing the length of the cantilever electrode which is the switching element. A multi-bit electromechanical memory device comprises the substrate(10); the bit line formed on the top of the substrate into the first direction; the first interlayer insulating film(22) formed on the bit line; the first and the second lower part word line(30,40) formed into the second direction crossing the first direction; the spacer(24) reclaiming the both side walls of the first and the second lower part word lines; the pad electrode(52) formed within the contact hole from which the first interlayer insulating film is removed; the first and second cantilever electrodes(50) bent into the third direction perpendicular to the first and second direction; the second inter metal dielectric formed on upper part of the pad electrode; the first and the second trap site(80) supported in the second inter metal dielectric; the first and the second top word line formed on the first and the second trap site.</p>
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