SEMICONDUCTOR LASER DIODE

申请公布号：

JP2008198743(A)

申请号：

JP20070031306

申请日期：

2007.02.09

申请公布日期：

2008.08.28

申请人：

FURUKAWA ELECTRIC CO LTD:THE

发明人：

SHINAGAWA TATSUSHI;IWAMI MASAYUKI;ISHII HIROTATSU

分类号：

H01S5/343

主分类号：

H01S5/343

摘要：

PROBLEM TO BE SOLVED: To provide a semiconductor laser diode in which the end surface of a resonator can be beautifully shaped and formed by cleaving, and visible light having a frequency longer than that of blue light can be emitted. SOLUTION: The semiconductor laser diode 10 employing a ZnO single crystal substrate 12 has an active layer 15 constituted of a nitride semiconductor containing In, and a semiconductor layer formed by being laminated in a laser element structure on the substrate surface of the ZnO single crystal substrate 12, and the end surface of a resonator is (1_100). The beautifully-shaped hexagonal of the semiconductor layer is superimposed on the hexagonal of the ZnO single crystal substrate 12 without causing rotation. Since the end surface of the resonator is (1_100) plane, not only the ZnO single crystal substrate 12 but also the end surface of the semiconductor layer grown on the ZnO single crystal substrate can beautifully be split when the end surface is cleaved. COPYRIGHT: (C)2008,JPO&INPIT