INSULATING FILM FORMATION COMPOSITION, AS WELL AS, SILICA SYSTEM FILM AND ITS FORMING METHOD

申请公布号：: JP2008198852(A)
申请号：: JP20070033687
申请日期：: 2007.02.14
申请公布日期：: 2008.08.28
申请人：: JSR CORP
发明人：: NOBE YOHEI;SUMIYA KOJI;NAKAGAWA YASUSHI
分类号：: H01L21/312;H01L21/316;H01L21/768
主分类号：: H01L21/312
摘要：: PROBLEM TO BE SOLVED: To provide an insulating film formation composition, silica system film, and its formation method, which is used suitably in semiconductor devices expected to have high integration and multilayering or the like, excellent in storage stability, low in specific inductive capacity, and usable for forming an insulating film excellent in mechanical strength. SOLUTION: The insulating film formation composition contains hydrolytic condensation compound obtained by the hydrolytic condensation of a component (A); in a formula (1) compound expressed with a general formula Si(OR<SP>1</SP>)<SB>4</SB>, and 50-100 mol% of at least a kind of silane compound selected from the group of compounds expressed with a general formula (2): R<SP>2</SP><SB>a</SB>(R<SP>3</SP>O)<SB>3-a</SB>Si-(R<SP>6</SP>)<SB>c</SB>-Si(OR<SP>4</SP>)<SB>3-b</SB>R<SP>5</SP><SB>b</SB>, and of a constituent (B): 0-50 mol% of other hydrolytic silane compounds, and organic solvent, wherein the pH is in the range of 3.0-5.0 and the amount of water contents is 2 mass% or below. In the formula (1), R<SP>1</SP>shows monovalent organic group. In the formula (2), R<SP>2</SP>-R<SP>5</SP>are identical or different, show respectively monovalent organic group, a and b are identical or different, show the number of 0-1, R<SP>6</SP>expresses oxygen atom, phenylene group or group expressed by -(CH<SB>2</SB>)<SB>m</SB>- (here, m expresses integral number of 1-6), and c shows 0 or 1. COPYRIGHT: (C)2008,JPO&INPIT