METHOD OF FORMING A METAL WIRE IN A SEMICONDUCTOR DEVICE
- 申请公布号：
- KR20090025432(A)
- 申请号：
- KR20070090288
- 申请日期：
- 2007.09.06
- 申请公布日期：
- 2009.03.11
- 申请人：
- HYNIX SEMICONDUCTOR INC.
- 发明人：
- KIM, TAE KYUNG;CHO, JIK HO
- 分类号：
- H01L21/28
- 主分类号：
- H01L21/28
- 摘要：
- A metal wiring forming method of a semiconductor device is provided to prevent the cross-talk and the metal wiring from being shorted. A metal wiring forming method of a semiconductor device includes the step of forming an etch stopping layer(108) and insulating layers(102,106,110) on a semiconductor substrate(100); the step of forming a contact hole which exposes the semiconductor substrate by etching the insulating layer and the etch stopping layer; the step of forming the conductive layer pattern on the insulating layer and forming the contact plug within the contact hole; the step of forming the trench by etching the insulating layer and the etch stopping layer; the step of forming the metal wiring within the trench.
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