METHOD OF FORMING A METAL WIRE IN A SEMICONDUCTOR DEVICE
- 申请公布号:
- KR20090025432(A)
- 申请号:
- KR20070090288
- 申请日期:
- 2007.09.06
- 申请公布日期:
- 2009.03.11
- 申请人:
- HYNIX SEMICONDUCTOR INC.
- 发明人:
- KIM, TAE KYUNG;CHO, JIK HO
- 分类号:
- H01L21/28
- 主分类号:
- H01L21/28
- 摘要:
- A metal wiring forming method of a semiconductor device is provided to prevent the cross-talk and the metal wiring from being shorted. A metal wiring forming method of a semiconductor device includes the step of forming an etch stopping layer(108) and insulating layers(102,106,110) on a semiconductor substrate(100); the step of forming a contact hole which exposes the semiconductor substrate by etching the insulating layer and the etch stopping layer; the step of forming the conductive layer pattern on the insulating layer and forming the contact plug within the contact hole; the step of forming the trench by etching the insulating layer and the etch stopping layer; the step of forming the metal wiring within the trench.
Copyright Notice © 2009-2024 传众 版权所有