METHOD OF DICING SEMICONDUCTOR WAFER, AND METHOD OF CONNECTING SEMICONDUCTOR CHIP WITH SUBSTRATE
- 申请公布号：
- JP2009260229(A)
- 申请号：
- JP20080254371
- 申请日期：
- 2008.09.30
- 申请公布日期：
- 2009.11.05
- 申请人：
- HITACHI CHEM CO LTD
- 发明人：
- ENOMOTO TETSUYA;HONDA KAZUTAKA;NAGAI AKIRA;HATAKEYAMA KEIICHI
- 分类号：
- H01L21/301;H01L21/60
- 主分类号：
- H01L21/301
- 摘要：
- <p><P>PROBLEM TO BE SOLVED: To provide a method of dicing a semiconductor wafer that forms semiconductor chips having resin layers formed at a time, and to provide a method of connecting a semiconductor chip formed by the method of dicing with a substrate. <P>SOLUTION: The method of dicing includes a first process of forming an insulating resin layer 3 over the entire circuit surface S1 of the semiconductor wafer 1 such that projection electrodes 2 are embedded, a second process of sticking a dicing tape 8 on the side of the insulating resin layer 3 formed on the circuit surface S1 in the first process to fix the semiconductor wafer 1 to a wafer ring 7, and a third process of dicing the semiconductor wafer 1 fixed to the wafer ring 7 in the second process from the side of a surface S2 opposite to the circuit surface S1 together with the insulating resin layer 3 to divide the semiconductor wafer 1 into individual semiconductor chips 11. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
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