Methods and circuits for generating a high voltage and related semiconductor memory devices
- 申请公布号：
- US7701772(B2)
- 申请号：
- US20080186087
- 申请日期：
- 2008.08.05
- 申请公布日期：
- 2010.04.20
- 申请人：
- SAMSUNG ELECTRONICS CO., LTD.
- 发明人：
- CHAE DONG-HYUK;LIM YOUNG-HO
- 分类号：
- G11C16/04
- 主分类号：
- G11C16/04
- 摘要：
- Methods of generating a program voltage for programming a non-volatile memory device include generating an initial voltage and generating a first ramping voltage in response to the initial voltage. The first ramping voltage has a ramping speed slower than the ramping speed of the initial voltage. A second ramping voltage is generated in response to the first ramping voltage. The second ramping voltage has a lower ripple than the first ramping voltage. The second ramping voltage is output as a program voltage for programming a non-volatile memory device. A program voltage generating circuit includes a program voltage generating unit configured to generate an initial voltage, a ramping circuit configured to generate a first ramping voltage responsive to the initial voltage, and a voltage controlling unit configured to generate a second ramping voltage having relatively low ripple and to output the first ramping voltage or the second ramping voltage responsive to a voltage level of the first ramping voltage. Semiconductor memory devices including program voltage generating circuits are also disclosed.
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