SELF-ALIGNED BIPOLAR TRANSISTOR STRUCTURE

申请公布号：

US2010127352(A1)

申请号：

US20100692892

申请日期：

2010.01.25

申请公布日期：

2010.05.27

申请人：

NATIONAL SEMICONDUCTOR CORPORATION

发明人：

EL-DIWANY MONIR;SADOVNIKOV ALEXEI;RAMDANI JAMAL

分类号：

H01L29/732;H01L29/73

主分类号：

H01L29/732

摘要：

A bipolar transistor structure comprises a semiconductor substrate having a first conductivity type, a collector region having a second conductivity type that is opposite the first conductivity type formed in a substrate active device region defined by isolation dielectric material formed in an upper surface of the semiconductor substrate, a base region that includes an intrinsic base region having the first conductivity type formed over the collector region and an extrinsic base region having the second conductivity type formed over the isolation dielectric material, and a sloped in-situ doped emitter plug having the second conductivity type formed on the intrinsic base region.