Sense Amplifier Used in the Write Operations of SRAM
- 申请公布号：
- US2010165749(A1)
- 申请号：
- US20080347140
- 申请日期：
- 2008.12.31
- 申请公布日期：
- 2010.07.01
- 申请人：
- WU JUI-JEN;CHEN YI-TZU
- 发明人：
- WU JUI-JEN;CHEN YI-TZU
- 分类号：
- G11C7/00;G11C7/06
- 主分类号：
- G11C7/00
- 摘要：
- A static random access memory (SRAM) circuit includes a pair of complementary global bit-lines, and a pair of complementary local bit-lines. A global read/write circuit is coupled to, and configured to write a small-swing signal to, the pair of global bit-lines in a write operation. The SRAM circuit further includes a first multiplexer and a second multiplexer, each having a first input and a second input. The first input of the first multiplexer and the first input of the second multiplexer are coupled to different one of the pair of global bit-lines. A sense amplifier includes a first input coupled to an output of the first multiplexer, and a second input coupled to an output of the second multiplexer. The sense amplifier is configured to amplify the small-swing signal to a full-swing signal, and outputs the full-swing signal to the pair of local bit-lines in the write operation.
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