METHOD AND APPARATUS FOR IMPROVED WAFER SINGULATION
- 申请公布号：
- WO2011123670(A2)
- 申请号：
- WO2011US30765
- 申请日期：
- 2011.03.31
- 申请公布日期：
- 2011.10.06
- 申请人：
- ELECTRO SCIENTIFIC INDUSTRIES, INC.;OSAKO, YASU;CHO, BONG;FINN, DARAGH;HOOPER, ANDREW;O'BRIEN, JAMES
- 发明人：
- OSAKO, YASU;CHO, BONG;FINN, DARAGH;HOOPER, ANDREW;O'BRIEN, JAMES
- 摘要：
- Laser singulation of electronic devices 12 from semiconductor substrates including wafers 180 is performed using up to 3 lasers 150, 160, 170 from 2 wavelength ranges. Using up to 3 lasers 150, 160, 170 from 2 wavelength ranges permits laser singulation of wafers 180 held by die attach film 184 while avoiding problems caused by single-wavelength dicing. In particular, using up to 3 lasers 150, 160, 170 from 2 wavelength ranges permits efficient dicing of semiconductor wafers 180 while avoiding debris and thermal problems associated with laser processing die attach tape 184.
Copyright Notice © 2009-2024 传众 版权所有