METHOD FOR ETCHING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE
- 申请公布号：
- US2012058582(A1)
- 申请号：
- US201113223586
- 申请日期：
- 2011.09.01
- 申请公布日期：
- 2012.03.08
- 申请人：
- TSUJI YUKIHIRO;SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 发明人：
- TSUJI YUKIHIRO
- 分类号：
- H01L33/00
- 主分类号：
- H01L33/00
- 摘要：
- A method for etching an insulating film includes the steps of forming an insulating film; forming a first resin layer composed of a non-silicon-containing resin on the insulating film; forming a pattern including projections and recesses in the first resin layer; forming a second resin layer composed of a silicon-containing resin to cover the projections and the recesses of the pattern in the first resin layer; etching the second resin layer by reactive ion etching with etching gas containing CF4 gas and oxygen gas until the projections of the first resin layer are exposed, a Si component of the second resin layer being oxidized in etching the second resin layer; selectively etching the first resin layer until the insulating film is exposed using as a mask the second resin layer buried in the recesses of the first resin layer to form a resin layer mask; and etching the insulating film using the resin layer mask. Further, in the step of etching the second resin layer, the reactive ion etching is performed under applying a self-bias voltage so that a Si product is removed, the Si product being provided from the Si component remaining in the second resin layer without being oxidized.
Copyright Notice © 2009-2024 传众 版权所有